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MRF8S8260Hr3 MRF8S8260Hsr3 1 rf device data freescale semiconductor, inc. rf power field effect transistors n--channel enhancement--mode lateral mosfets designed for cdma base station applications with frequencies from 790 to 895 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--carrier w--cdma performance: v dd =28volts,i dq = 1500 ma, p out = 70 watts avg., iq magnitude clipping, channel bandwidth = 3.84 mhz, input signal par = 7.5 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 850 mhz 21.3 36.2 6.5 --37.0 875 mhz 21.4 37.4 6.3 --36.7 895 mhz 21.1 37.5 6.2 --36.9 ? capable of handling 7:1 vswr, @ 32 vdc, 875 mhz, 390 watts cw (1) output power (3 db input overdrive from rated p out ), designed for enhanced ruggedness ? typical p out @ 1 db compression point ? 260 watts cw (1) features ? 100% par tested for guaranteed output power capability ? characterized with series equival ent large--signal impedance parameters and common source s--parameters ? internally matched for ease of use ? integrated esd protection ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications ? in tape and reel. r3 suffix = 250 units, 56 mm tape width, 13 inch reel. for r5 tape and reel option, see p. 16. table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +70 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg -- 65 to +150 ? c case operating temperature t c 150 ? c operating junction temperature (2,3) t j 225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 201 0.94 w w/ ? c table 2. thermal characteristics characteristic symbol value (3,4) unit thermal resistance, junction to case case temperature 83 ? c, 70 w cw, 28 vdc, i dq = 1500 ma, 895 mhz case temperature 80 ? c, 260 w cw (1) ,28vdc,i dq = 1500 ma, 895 mhz r ? jc 0.36 0.31 ? c/w 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table. 2. continuous use at maximum temperature will affect mttf. 3. mttf calculator available at http://www.freescale.com/rf . select software & tools/developm ent tools/calculators to access mttf calculators by product. 4. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes -- an1955. document number: MRF8S8260H rev. 1, 2/2012 freescale semiconductor technical data 850--895 mhz, 70 w avg. 28 v single w--cdma lateral n--channel rf power mosfets MRF8S8260Hr3 MRF8S8260Hsr3 case 465c--03 ni--880s MRF8S8260Hsr3 case 465b--04 ni--880 MRF8S8260Hr3 ? freescale semiconductor, inc., 2011--2012. a ll rights reserved.
2 rf device data freescale semiconductor, inc. MRF8S8260Hr3 MRF8S8260Hsr3 table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) a charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =70vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =28vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 1380 ? adc) v gs(th) 1.5 2.3 3.0 vdc gate quiescent voltage (v dd =28vdc,i d = 1500 madc, measured in functional test) v gs(q) 2.3 3.0 3.8 vdc drain--source on--voltage (v gs =10vdc,i d =3.0adc) v ds(on) 0.1 0.24 0.3 vdc functional tests (1) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1500 ma, p out = 70 w avg., f = 895 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 19.6 21.1 22.6 db drain efficiency ? d 35.5 37.5 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 5.8 6.2 ? db adjacent channel power ratio acpr ? --36.9 --35.0 dbc input return loss irl ? -- 1 6 -- 1 2 db typical broadband performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1500 ma, p out =70wavg., single--carrier w--cdma, iq magnitude clipping, input signal par = 7.5 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 850 mhz 21.3 36.2 6.5 --37.0 -- 9 875 mhz 21.4 37.4 6.3 --36.7 -- 1 3 895 mhz 21.1 37.5 6.2 --36.9 -- 1 6 1. part internally matched both on input and output. (continued)
MRF8S8260Hr3 MRF8S8260Hsr3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1500 ma, 850--895 mhz bandwidth p out @ 1 db compression point, cw p1db ? 260 (1) ? w imd symmetry @ 80 w pep, p out where imd third order intermodulation ? 30 dbc (delta imd third order intermodulation between upper and lower sidebands > 2 db) imd sym ? 9.7 ? mhz vbw resonance point (imd third order intermodulation inflection point) vbw res ? 60 ? mhz gain flatness in 45 mhz bandwidth @ p out =70wavg. g f ? 0.3 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.016 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) (1) ? p1db ? 0.002 ? db/ ? c 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. MRF8S8260Hr3 MRF8S8260Hsr3 figure 1. MRF8S8260Hr3(hsr3) t est circuit component layout *c1 and c20 are mounted vertically. MRF8S8260H/hs rev. 1 -- cut out area c2 c20* c21 c19 c31 c25c24 c29c28 c30 c23c22 c27c26 c12 c13 c18 c15c14 c17c16 c1* c3 c4 c5 c6 c9 c7 c8 r1 r2 c11 c10 b1 table 5. MRF8S8260Hr3(hsr3) test circ uit component designations and values part description part number manufacturer b1 rf bead blm21pg300sn1d murata c1 2.7 pf chip capacitor atc100b2r7bt500xt atc c2 100 pf chip capacitor atc100b101jt500xt atc c3 2.4 pf chip capacitor atc100b2r4jt500xt atc c4 5.1 pf chip capacitor atc100b5r1ct500xt atc c5 c7 3.3 pf chip capacitors atc100b3r3ct500xt atc c6, c8 3.9 pf chip capacitors atc100b3r9ct500xt atc c9, c20, c22, c23, c24, c25 43 pf chip capacitors atc100b430jt500xt atc c10 4.7 ? f, 100 v chip capacitor grm55er72a475ka01b murata c11 22 ? f electrolytic capacitor uud1v220mcl1gs nichicon c12, c13 8.2 pf chip capacitors atc100b8r2ct500xt atc c14, c16 3.9 pf chip capacitors atc100b3r9ct500xt atc c15, c17 3.0 pf chip capacitors atc100b3r0ct500xt atc c18 0.7 pf chip capacitor atc100b0r7bt500xt atc c19 4.3 pf chip capacitor atc100b4r3ct500xt atc c21 0.1 pf chip capacitor atc100b0r1bt500xt atc c26, c27, c28, c29 10 ? f, 50 v chip capacitors grm55dr61h106ka88l murata c30, c31 470 ? f electrolytic capacitors mcgpr63v477m13x26--rh multicomp r1 2.0 ? , 1/4 w chip resistor p2.0vct--nd panasonic r2 1k ? , 1/4 w chip resistor crcw12061k00fkea vishay pcb 0.030 ? , ? r =3.5 tc350 arlon
MRF8S8260Hr3 MRF8S8260Hsr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) 820 acpr f, frequency (mhz) figure 2. output peak--to--average ratio compression (parc) broadband performance @ p out = 70 watts avg. -- 4 -- 1 2 15 25 -- 4 1 38 36 34 -- 3 7 ? d , drain efficiency (%) g ps , power gain (db) 24 23 21 840 860 880 900 920 940 960 980 -- 3 6 -- 2 0 parc (db) -- 1 . 8 -- 1 -- 2 acpr (dbc) figure 3. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 -- 7 0 -- 3 0 -- 4 0 -- 6 0 1 100 imd, intermodulatio n distortion (dbc) -- 5 0 im5--u im5--l figure 4. output peak--to--average ratio compression (parc) versus output power 1 p out , output power (watts) -- 1 -- 3 -- 5 0 -- 2 -- 4 output compression at 0.01% probability on ccdf (db) 40 60 140 20 56 50 44 38 32 26 ? d ? drain efficiency (%) --1db=63.8w ? d acpr (dbc) -- 5 5 -- 2 5 -- 3 0 -- 3 5 -- 4 5 -- 4 0 -- 5 0 22 g ps , power gain (db) 21.5 20.5 19.5 v dd =28vdc,i dq = 1500 ma, f = 875 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 7.5 d b @ 0.01% pr obability on ccdf --2db=89.6w --3db=119.8w 0 80 100 acpr -- 2 0 120 g ps parc 16 17 18 19 20 22 32 30 -- 3 8 -- 3 9 -- 4 0 -- 8 -- 1 6 -- 1 . 6 -- 1 . 4 -- 1 . 2 21 20 19 im7--l im7--u parc v dd =28vdc,p out = 80 w (pep), i dq = 1500 ma two--tone measurements, (f1 + f2)/2 = center frequency of 875 mhz im3--u im3--l ? d irl v dd =28vdc,p out =70w(avg.),i dq = 1500 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 7.5 db @ 0.01% probab ility on ccdf g ps
6 rf device data freescale semiconductor, inc. MRF8S8260Hr3 MRF8S8260Hsr3 typical characteristics 1 acpr p out , output power (watts) avg. figure 5. single--carrier w--cdma power gain, drain efficiency and acpr versus output power -- 1 0 14 23 0 66 55 44 33 22 ? d , drain efficiency (%) g ps , power gain (db) 10 100 400 11 -- 6 0 acpr (dbc) 21.5 20 0 -- 2 0 figure 6. broadband frequency response 0 24 650 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1500 ma 12 8 725 gain (db) 20 gain 800 875 950 1100 1250 irl -- 2 0 10 5 0 -- 5 -- 1 0 irl (db) -- 1 5 18.5 17 15.5 -- 5 0 -- 4 0 -- 3 0 895 mhz 4 16 g ps 1175 v dd =28vdc,i dq = 1500 ma single--carrier w--cdma 3.84 mhz channel bandwidth input signal par = 7.5 db @ 0.01% probab ility on ccdf 1025 850 mhz 875 mhz 850 mhz 875 mhz 895 mhz ? d 895 mhz 875 mhz 850 mhz w--cdma test signal 0.0001 100 0 peak--to--average (db) figure 7. ccdf w--cdma iq magnitude clipping, single--carrier test signal 10 1 0.1 0.01 0.001 24 68 probability (%) w--cdma. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. input signal par = 7.5 db @ 0.01% probabilit y on ccdf input signal 10 -- 6 0 --100 10 (db) -- 2 0 -- 3 0 -- 4 0 -- 5 0 -- 7 0 -- 8 0 -- 9 0 3.84 mhz channel bw 7.2 1.8 5.4 3.6 0 -- 1 . 8-- 3 . 6-- 5 . 4 -- 9 9 f, frequency (mhz) figure 8. single--carrier w--cdma spectrum -- 7 . 2 --acpr in 3.84 mhz integrated bw +acprin3.84mhz integrated bw -- 1 0 0 13579
MRF8S8260Hr3 MRF8S8260Hsr3 7 rf device data freescale semiconductor, inc. v dd =28vdc,i dq = 1500 ma , p out =70wavg. f mhz z source ? z load ? 820 3.19 -- j1.47 1.38 -- j0.80 840 2.98 -- j1.61 1.37 -- j0.52 860 2.78 -- j1.75 1.38 -- j0.29 880 2.50 -- j1.87 1.44 -- j0.14 900 2.20 -- j1.92 1.48 -- j0.01 920 1.96 -- j1.79 1.52 + j0.12 940 1.82 -- j1.58 1.59 + j0.32 960 1.74 -- j1.35 1.68 + j0.51 980 1.68 -- j1.12 1.77 + j0.61 z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. figure 9. series equivalent source and load impedance z source z load input matching network device under test output matching network
8 rf device data freescale semiconductor, inc. MRF8S8260Hr3 MRF8S8260Hsr3 alternative peak tune load pull characteristics p in , input power (dbm) v dd =28vdc,i dq = 1500 ma, pulsed cw, 10 ? sec(on), 10% duty cycle 59 56 53 60.5 57.5 48.5 p out , output power (dbm) note: load pull test fixture tuned for peak p1db output power @ 28 v 54.5 62 28 63.5 51.5 50 29.5 ideal actual 880 mhz 895 mhz 47 865 mhz 851 mhz 851 mhz 895 mhz 880 mhz 865 mhz 31 32.5 34 35.5 37 38.5 40 41.5 43 44.5 f (mhz) p1db p3db watts dbm watts dbm 851 359 55.5 482 56.8 865 366 55.6 485 56.9 880 362 55.6 477 56.8 895 365 55.6 478 56.8 test impedances per compression level f (mhz) z source ? z load ? 851 p1db 1.46 -- j2.70 3.02 + j0.04 865 p1db 1.85 -- j3.04 2.92 + j0.03 880 p1db 2.20 -- j3.31 2.85 + j0.70 895 p1db 2.53 -- j3.58 2.50 + j0.76 figure 10. pulsed cw output power versus input power @ 28 v
MRF8S8260Hr3 MRF8S8260Hsr3 9 rf device data freescale semiconductor, inc. package dimensions
10 rf device data freescale semiconductor, inc. MRF8S8260Hr3 MRF8S8260Hsr3
MRF8S8260Hr3 MRF8S8260Hsr3 11 rf device data freescale semiconductor, inc.
12 rf device data freescale semiconductor, inc. MRF8S8260Hr3 MRF8S8260Hsr3
MRF8S8260Hr3 MRF8S8260Hsr3 13 rf device data freescale semiconductor, inc. product documentation, tools and software refer to the following documents, tools and software to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file for software and tools, do a part number search at http://www.freescale.com, and select the ?part number? link. go to the software & tools tab on the part?s product summary page to download the respective tool. r5 tape and reel option r5 suffix = 50 units, 56 mm tape width, 13 inch reel. the r5 tape and reel option for MRF8S8260H and MRF8S8260Hs parts will be available for 2 years after release of MRF8S8260H and MRF8S8260Hs. freescale semiconductor, inc. reserves the right to limit the quantities that will be delivered in the r5 tape and reel option. at the end of the 2 year period customers who have purchased these devices in the r5 tape and reel option will be offered MRF8S8260H and mr f8s8260hs in the r3 tape and reel option. revision history the following table summarizes revisions to this document. revision date description 0 jan. 2011 ? initial release of data sheet 1 feb. 2012 ? table 3, esd protection characteristics, removed the word ?minimum? after the esd class rating. esd ratings are characterized during new product dev elopment but are not 100% tested during production. esd ratings provided in the data sheet are intended to be used as a guideline when handling esd sensitive devices, p. 2. ? replaced case outline 465b--03, issue d, with 465b--04, issue f, p. 1, 9--10. deleted style 1 pin note on sheet 2. on sheet 2, changed dimension b in mm from 13. 6--13.8 to 13.59--13.84, changed dimension h in mm from 1.45--1.7 to 1.45--1.70, changed dimension k in mm from 4.44--5.21 to 4.45--5.21, changed dimension m in mm from 22.15--22.55 to 22.15--22.56, changed dimension n in mm from 19.3--22.6 to 22.12--22.58, changed dimension q in mm from 3--3.51 to 3.00--3.51, changed dimension r and s in mm from 13.1--13.3 to 13.08--13.34. ? replaced case outline 465c--02, issue d, with 465c--03, issue e, p. 1, 11--12. deleted style 1 pin note on sheet 2. on sheet 2, changed dimension b in mm from 13. 6--13.8 to 13.59--13.84, changed dimension h in mm from 1.45--1.7 to 1.45--1.70, changed dimension m in mm from 22.15--22.55 to 22.15--22.56, changed dimension n in mm from 19.3--22.6 to 22.12--22.58, changed dimension r and s in mm from 13.1--13.3 to 13.08--13.34.
14 rf device data freescale semiconductor, inc. MRF8S8260Hr3 MRF8S8260Hsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regar ding the suitab ility of its products for any particula r purpose, nor does freescale semiconductor assu me any liability ari sing out of the app lication or use of any product or circuit, and specifically discl aims any and all liability, incl uding without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subs idiaries, affiliate s, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale t and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2011--2012. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33169354848(french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1--8--1, shimo--meguro, meguro--ku, tokyo 153--0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 10 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center 1--800--441--2447 or +1--303--675--2140 fax: +1--303--675--2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: MRF8S8260H rev. 1, 2/2012

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